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d a t a sh eet preliminary speci?cation supersedes data of 1998 apr 07 2003 feb 12 integrated circuits tda1562q; tda1562st; TDA1562SD 70 w high efficiency power amplifier with diagnostic facility
2003 feb 12 2 philips semiconductors preliminary speci?cation 70 w high ef?ciency power ampli?er with diagnostic facility tda1562q; tda1562st; TDA1562SD features very high output power, operating from a single low supply voltage low power dissipation, when used for music signals switches to low output power at too high case temperatures few external components fixed gain differential inputs with high common mode rejection mode select pin (on, mute and standby) status i/o pin (class-h, class-b and fast mute) all switching levels with hysteresis diagnostic pin with information about: C dynamic distortion detector (ddd) C any short-circuit at outputs C open load detector C temperature protection. no switch-on or switch-off plops fast mute on supply voltage drops quick start option (e.g. car-telephony/navigation) low (delta) offset voltage at the outputs load dump protection short-circuit safe to ground, supply voltage and across the load low power dissipation in any short-circuit condition protected against electrostatic discharge thermally protected flexible leads. general description the tda1562 is a monolithic integrated 70 w/4 w bridge-tied load (btl) class-h high efficiency power amplifier in a 17 lead dil-bent-sil plastic power package. the device can be used for car audio systems (e.g. car radios and boosters) as well as mains fed applications (e.g. midi/mini audio combinations and tv sound). quick reference data v p = 14.4 v; r l =4 w ; r s =0 w ; f = 1 khz; t amb =25 c; unless otherwise speci?ed. symbol parameter conditions min. typ. max. unit v p supply voltage operating; note 1 8 14.4 18 v non-operating -- 30 v load dump -- 45 v i q quiescent current on and mute; r l = open circuit - 110 150 ma i stb standby current standby - 350 m a ? v oo ? output offset voltage on and mute -- 100 mv ?d v oo ? delta output offset voltage on ? mute -- 30 mv g v voltage gain 25 26 27 db ? z i(dif) ? differential input impedance 90 150 - k w p o output power thd = 0.5% 45 55 - w thd = 10% 60 70 - w thd total harmonic distortion p o =1w - 0.03 - % p o =20w - 0.06 - % ddd active - 2.1 - %
2003 feb 12 3 philips semiconductors preliminary speci?cation 70 w high ef?ciency power ampli?er with diagnostic facility tda1562q; tda1562st; TDA1562SD note 1. when operating at v p > 16 v, the output power must be limited to 85 w at thd = 10% (or minimum load is 6 w ). ordering information svrr supply voltage ripple rejection on and mute 55 63 - db cmrr common mode rejection ratio on 56 80 - db isrr input signal rejection ratio mute 80 100 - db v n(o) noise output voltage on - 100 150 m v type number package name description version tda1562q dbs17p plastic dil-bent-sil power package; 17 leads (lead length 12 mm) sot243-1 tda1562q/s10 dbs17p plastic dil-bent-sil power package; 17 leads (lead length 7.7 mm) sot243-3 tda1562st rdbs17p plastic rectangular-dil-bent-sil power package; 17 leads (row spacing 2.54 mm) sot577-2 TDA1562SD rdbs17p plastic rectangular-dil-bent-sil (reverse bent) power package; 17 leads (row spacing 2.54 mm) sot668-2 symbol parameter conditions min. typ. max. unit
2003 feb 12 4 philips semiconductors preliminary speci?cation 70 w high ef?ciency power ampli?er with diagnostic facility tda1562q; tda1562st; TDA1562SD block diagram fig.1 block diagram. handbook, full pagewidth power- stage preamp stat v p * v p * 75 k w - + c1 + c1 - feedback circuit tda1562 power- stage class-b class-h fast mute temperature sensor load dump protection standby mute on load detector dynamic distortion detector diagnostic interface temperature protection current protection lift-supply lift-supply disable disable 16 mode 4 1 in + 35 75 k w 15 k w reference voltage preamp - + 2 in - 14 v ref 17 sgnd c2 + c2 - out - 15 13 6 pgnd1 pgnd2 mgl264 12 11 diag out + 7 8 910 v p2 v p1
2003 feb 12 5 philips semiconductors preliminary speci?cation 70 w high ef?ciency power ampli?er with diagnostic facility tda1562q; tda1562st; TDA1562SD pinning symbol pin description in+ 1 signal input (positive) in - 2 signal input (negative) c1 - 3 negative terminal of lift electrolytic capacitor 1 mode 4 mode select input c1+ 5 positive terminal of lift electrolytic capacitor 1 pgnd1 6 power ground 1 out+ 7 positive output diag 8 diagnostic output (open-collector) v p1 9 supply voltage 1 v p2 10 supply voltage 2 out - 11 negative output pgnd2 12 power ground 2 c2+ 13 positive terminal of lift electrolytic capacitor 2 v ref 14 internal reference voltage c2 - 15 negative terminal of lift electrolytic capacitor 2 stat 16 status i/o sgnd 17 signal ground fig.2 pin configuration. handbook, halfpage tda1562q tda1562st TDA1562SD mgl263 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 in + in - c1 - mode c1 + pgnd1 out + diag v p1 v p2 out - pgnd2 c2 + v ref c2 - stat sgnd
2003 feb 12 6 philips semiconductors preliminary speci?cation 70 w high ef?ciency power ampli?er with diagnostic facility tda1562q; tda1562st; TDA1562SD functional description the tda1562 contains a mono class-h btl output power amplifier. at low output power, up to 18 w, the device operates as a normal btl amplifier. when a larger output voltage swing is required, the internal supply voltage is lifted by means of the external electrolytic capacitors. due to this momentarily higher supply voltage the obtainable output power is 70 w. in normal use, when the output is driven with music-like signals, the high output power is only needed during a small percentage of time. under the assumption that a music signal has a normal (gaussian) amplitude distribution, the reduction in dissipation is about 50% when compared to a class-b output amplifier with the same output power. the heatsink should be designed for use with music signals. if the case temperature exceeds 120 c the device will switch back from class-h to class-b operation. the high power supply voltage is then disabled and the output power is limited to 20 w. when the supply voltage drops below the minimum operating level, the amplifier will be muted immediately. mode select input (pin mode) this pin has 3 modes: 1. low for standby: the complete circuit is switched off, the supply current is very low 2. mid for mute: the circuit is switched on, but the input signal is suppressed 3. high for on: normal operation, the input signal is amplified by 26 db. when the circuit is switched from mute to on or vice versa the actual switching takes place at a zero crossing of the input signal. the circuit contains a quick start option, i.e. when it is switched directly from standby to on, the amplifier is fully operational within 50 ms (important for applications like car telephony and car navigation). status i/o (pin stat) i nput this input has 3 possibilities: 1. low for fast mute: the circuit remains switched on, but the input signal is suppressed 2. mid for class-b: the circuit operates as class-b amplifier, the high power supply voltage is disabled, independent of the case temperature 3. high for class-h: the circuit operates as class-h amplifier, the high power supply voltage is enabled, independent of the case temperature. when the circuit is switched from fast mute to class-b/h or vice versa the switching is immediately carried out. when the circuit is switched from class-b to class-h or vice versa the actual switching takes place at a zero crossing of the input signal. o utput this output has 3 possibilities: 1. low for mute: acknowledge of muted amplifier 2. mid for class-b: the circuit operates as class-b amplifier, the high power supply voltage is disabled, caused by the case temperature t c > 120 c 3. high for class-h: the circuit operates as class-h amplifier, the high power supply voltage is enabled, because the case temperature t c < 120 c. when the circuit is switched from class-b to class-h or vice versa the actual switching takes place at a zero crossing of the input signal. the status i/o pins of maximum 8 devices may be tied together for synchronizing purposes.
2003 feb 12 7 philips semiconductors preliminary speci?cation 70 w high ef?ciency power ampli?er with diagnostic facility tda1562q; tda1562st; TDA1562SD fig.3 switching characteristics. handbook, full pagewidth on mute 0 supply voltage reference voltage mode select input status i/o input high mid low high mid class-h (t c < 120 c) class-b (t c > 120 c) low status i/o output high mid low v ref vrt 0 output voltage across load 0 zero crossing change class-b/h operation zero crossing mute function fast mute function quick start mute supply mute function mgl272
2003 feb 12 8 philips semiconductors preliminary speci?cation 70 w high ef?ciency power ampli?er with diagnostic facility tda1562q; tda1562st; TDA1562SD diagnostic output (pin diag) d ynamic d istortion d etector (ddd) at the onset of clipping of the output stages, the ddd becomes active. this information can be used to drive a sound processor or dc-volume control to attenuate the input signal and so limit the distortion. s hort - circuit protection when a short-circuit occurs at the outputs to ground or to the supply voltage, the output stages are switched off. they will be switched on again approximately 20 ms after removing the short-circuit. during this short-circuit condition the diagnostic output is continuously low. when a short-circuit occurs across the load, the output stages are switched off during approximately 20 ms. after that time is checked during approximately 50 m s whether the short-circuit is still present. during this short-circuit condition the diagnostic output is low for 20 ms and high for 50 m s. the power dissipation in any short-circuit condition is very low. t emperature detection just before the temperature protection becomes active the diagnostic output becomes continuously low. l oad detection directly after the circuit is switched from standby to mute or on, a built-in detection circuit checks whether a load is present. the results of this check can be detected at the diagnostic output, by switching the mode select input in the mute mode. since the diagnostic output is an open-collector output, more devices can be connected. fig.4 diagnostic information. handbook, full pagewidth high mid low mode select input diagnostic output output voltage across load 0 high low no load clipping signal short-circuit to supply or ground short-circuit across load t mgl265
2003 feb 12 9 philips semiconductors preliminary speci?cation 70 w high ef?ciency power ampli?er with diagnostic facility tda1562q; tda1562st; TDA1562SD fig.5 behaviour as a function of temperature. handbook, full pagewidth class-h maximum output voltage swing diagnostic output status i/o: high status i/o: open mgl266 class-b 0 high low status i/o output high mid low 120 145 t j ( c) 150 160 100 limiting values in accordance with the absolute maximum rating system (iec 60134). notes 1. when operating at v p > 16 v, the output power must be limited to 85 w at thd = 10% (or minimum load is 6 w ). 2. t j is a theoretical temperature which is based on a simplified representation of the thermal behaviour of the device. t j =t c +p r th(j-c) , where r th(j-c) is a fixed value to be used for the calculation of t j . the rating for t j limits the allowable combinations of power dissipation p and case temperature t c (in accordance with iec 60747-1). symbol parameter conditions min. max. unit v p supply voltage operating; note 1 - 18 v non-operating - 30 v load dump; t r > 2.5 ms; t = 50 ms - 45 v i osm non-repetitive peak output current - 10 a i orm repetitive peak output current - 8a v sc short-circuit safe voltage - 18 v t stg storage temperature - 55 +150 c t amb ambient temperature - 40 - c t j junction temperature note 2 - 150 c p tot total power dissipation - 60 w
2003 feb 12 10 philips semiconductors preliminary speci?cation 70 w high ef?ciency power ampli?er with diagnostic facility tda1562q; tda1562st; TDA1562SD quality specification quality in accordance with snw-fq-611d , if this type is used as an audio amplifier. thermal characteristics dc characteristics v p = 14.4 v; r l =4 w ; t amb =25 c; measurements in accordance with fig.9; unless otherwise speci?ed. symbol parameter conditions value unit r th(j-c) thermal resistance from junction to case 1.5 k/w r th(j-a) thermal resistance from junction to ambient in free air 40 k/w symbol parameter conditions min. typ. max. unit supplies v p1 and v p2 v p supply voltage 8 14.4 18 v v p(th+) supply threshold voltage mute ? on 7 - 9v v p(th -) supply threshold voltage on ? mute 7 - 9v v p(h1) hysteresis ? (v th+ - v th - ) ?- 200 - mv i q quiescent current on and mute; r l = open circuit - 110 150 ma i stb standby current standby - 350 m a ampli?er outputs out+ and out - v o output voltage on and mute - 6.5 - v ? v oo ? output offset voltage on and mute -- 100 mv ?d v oo ? delta output offset voltage on ? mute -- 30 mv mode select input mode v i input voltage 0 - v p v i i input current v mode = 14.4 v - 15 20 m a v th1+ threshold voltage 1+ standby ? mute 1 - 2.2 v v th1 - threshold voltage 1 - mute ? standby 0.9 - 2v v msh1 hysteresis ? (v th1+ - v th1 - ) ?- 200 - mv v th2+ threshold voltage 2+ mute ? on 3.3 - 4.2 v v th2 - threshold voltage 2 - on ? mute 3.3 - 4v v msh2 hysteresis ? (v th2+ - v th2 - ) ?- 200 - mv status i/o stat p in s tat as input v st input voltage 0 - v p v i st(h) high-level input current v s tat = 14.4 v - 3.5 4.5 ma i st(l) low-level input current v s tat =0v -- 350 - 400 m a v th1+ threshold voltage 1+ fast mute ? class-b -- 2v v th1 - threshold voltage 1 - class-b ? fast mute 1 -- v v sth1 hysteresis ? (v th1+ - v th1 - ) ?- 200 - mv
2003 feb 12 11 philips semiconductors preliminary speci?cation 70 w high ef?ciency power ampli?er with diagnostic facility tda1562q; tda1562st; TDA1562SD v th2+ threshold voltage 2+ class-b ? class-h -- 4.2 v v th2 - threshold voltage 2 - class-h ? class-b 3.3 -- v v sth2 hysteresis ? (v th2+ - v th1 - ) ?- 200 - mv p in s tat as output i st(mute) mute acknowledge sink current 2.2 -- ma v st(mute) mute acknowledge output voltage i st = 2.2 ma -- 0.5 v i st(clb) class-b operation output current 15 --m a v st(clb) class-b operation output voltage i st =15 m a 2.0 - 3.0 v i st(clh) class-h operation source current - 140 --m a v st(clh) class-h operation output voltage i st = - 140 m av p - 2.5 -- v t c(th) threshold case temperature sensor - 120 - c diagnostic output diag v diag output voltage active low -- 0.6 v r l load resistance for open load detection 100 --w t j(th) threshold junction temperature sensor - 145 - c symbol parameter conditions min. typ. max. unit fig.6 supply voltage transfer characteristic. handbook, full pagewidth v ph1 v th - v th + mgl267 fast mute on v p
2003 feb 12 12 philips semiconductors preliminary speci?cation 70 w high ef?ciency power ampli?er with diagnostic facility tda1562q; tda1562st; TDA1562SD fig.7 mode select transfer characteristic. handbook, full pagewidth v msh1 v msh2 v ms v th1 - v th1 + v th2 - v th2 + mgl268 standby mute on fig.8 status i/o transfer characteristic. handbook, full pagewidth v sth1 v sth2 v th1 - v th1 + v th2 - v th2 + mgl269 fast mute class-b class-h v st
2003 feb 12 13 philips semiconductors preliminary speci?cation 70 w high ef?ciency power ampli?er with diagnostic facility tda1562q; tda1562st; TDA1562SD ac characteristics v p = 14.4 v; r l =4 w ; r s =0 w ; f = 1 khz; t amb =25 c; measurements in accordance with fig.9; unless otherwise speci?ed. notes 1. the low frequency power roll-off is determined by the value of the electrolytic lift capacitors. 2. the low frequency gain roll-off is determined by the value of the input coupling capacitors. 3. supply voltage ripple rejection is measured across r l ; ripple voltage v ripple(max) = 2 v (p-p). 4. common mode rejection ratio is measured across r l ; common mode voltage v cm(max) = 2 v (p-p). cmmr (db) = differential gain (g v ) + common mode attenuation ( a cm ). test set-up according to fig.10; mismatch of input coupling capacitors excluded. 5. input signal rejection ratio is measured across r l ; input voltage v i(max) = 2 v (p-p). issr (db) = different gain (g v ) + mute attenuation ( a m ). 6. noise output voltage is measured in a bandwidth of 20 hz to 20 khz. 7. noise output voltage is independent of source impedance r s . symbol parameter conditions min. typ. max. unit p o output power class-b; thd = 10% 16 19 - w class-h; thd = 10% 60 70 - w class-h; thd = 0.5% 45 55 - w f ro(h)(p) high frequency power roll-off p o ( - 1 db); thd = 0.5%; note 1 - 20 - khz thd total harmonic distortion p o =1w - 0.03 - % p o =20w - 0.06 - % ddd active - 2.1 - % g v voltage gain 25 26 27 db f ro(h)(g) high frequency gain roll-off g v ( - 1 db); note 2 20 -- khz ? z i(dif) ? differential input impedance 90 150 210 k w svrr supply voltage ripple rejection on and mute; note 3 55 63 - db standby; note 3 - 90 - db cmrr common mode rejection ratio on; note 4 56 80 - db isrr input signal rejection ratio mute; note 5 80 100 - db v n(o) noise output voltage on; note 6 - 100 150 m v mute; notes 6 and 7 - 60 -m v
2003 feb 12 14 philips semiconductors preliminary speci?cation 70 w high ef?ciency power ampli?er with diagnostic facility tda1562q; tda1562st; TDA1562SD test and application information handbook, full pagewidth power- stage stat v p * v p * 75 k w 10 k w r l = 4 w - + c1 + c1 - feedback circuit tda1562 power- stage class-b class-h fast mute temperature sensor load dump protection standby mute on load detector dynamic distortion detector diagnostic interface temperature protection current protection lift-supply lift-supply disable disable 16 mode 4 1 in + 100 nf 35 4700 m f 2200 m f 100 nf 75 k w 15 k w reference voltage - + 2 audio source 1/2*r s 1/2*r s in - 14 v ref 17 sgnd pre- amp pre- amp 100 nf 10 m f c2 + c2 - out - 15 13 6 gnd mgl271 12 11 diag out + + v p 7 8 4700 m f 910 + v p v p2 v p1 pgnd1 pgnd2 fig.9 test and application circuit.
2003 feb 12 15 philips semiconductors preliminary speci?cation 70 w high ef?ciency power ampli?er with diagnostic facility tda1562q; tda1562st; TDA1562SD fig.10 cmrr test set-up. handbook, full pagewidth tda1562 supply 10 mgl270 7 11 12 17 14 2 1 6 + v p r l v cm c i c i gnd 9 sgnd pgnd1 pgnd2
2003 feb 12 16 philips semiconductors preliminary speci?cation 70 w high ef?ciency power ampli?er with diagnostic facility tda1562q; tda1562st; TDA1562SD package outlines references outline version european projection issue date iec jedec eiaj dimensions (mm are the original dimensions) note 1. plastic or metal protrusions of 0.25 mm maximum per side are not included. sot243-1 0 5 10 mm scale d l e a c a 2 l 3 q w m b p 1 d d z e e x h 117 j e h non-concave 97-12-16 99-12-17 dbs17p: plastic dil-bent-sil power package; 17 leads (lead length 12 mm) sot243-1 view b : mounting base side m 2 e v m b unit a e 1 a 2 b p cd (1) e (1) z (1) de d h ll 3 m mm 17.0 15.5 4.6 4.4 0.75 0.60 0.48 0.38 24.0 23.6 20.0 19.6 10 2.54 v 0.8 12.2 11.8 1.27 e 2 5.08 2.4 1.6 e h 6 2.00 1.45 2.1 1.8 3.4 3.1 4.3 12.4 11.0 q j 0.4 w 0.03 x
2003 feb 12 17 philips semiconductors preliminary speci?cation 70 w high ef?ciency power ampli?er with diagnostic facility tda1562q; tda1562st; TDA1562SD unit a e 1 e 2 a 2 b p ce (1) d (1) z (1) de ll 1 references outline version european projection issue date iec jedec eiaj mm 13.5 4.6 4.4 0.75 0.60 0.48 0.38 24.0 23.6 20.0 19.6 10 2.54 12.2 11.8 1.27 2.54 3.75 3.15 e h d h 6 2.00 1.45 2.1 1.8 3.4 3.1 dimensions (mm are the original dimensions) note 1. plastic or metal protrusions of 0.25 mm maximum per side are not included. 3.75 3.15 sot577-2 0 5 10 mm scale q j 0.4 w 0.6 v 0.03 x d e a l 1 q l c a 2 w m b p 1 d z e 2 e e 117 j 01-01-05 rdbs17p: plastic rectangular-dil-bent-sil power package; 17 leads (row spacing 2.54 mm) sot577-2 v m d x h e h non-concave view b : mounting base side b
2003 feb 12 18 philips semiconductors preliminary speci?cation 70 w high ef?ciency power ampli?er with diagnostic facility tda1562q; tda1562st; TDA1562SD unit a e 1 e 2 a 2 b p ce (1) d (1) z (1) de ll 1 references outline version european projection issue date iec jedec eiaj mm 13.5 4.6 4.4 0.75 0.60 0.48 0.38 24.0 23.6 20.0 19.6 10 2.54 12.2 11.8 1.27 2.54 3.75 3.15 e h d h 6 2.00 1.45 2.1 1.8 3.4 3.1 dimensions (mm are the original dimensions) note 1. plastic or metal protrusions of 0.25 mm maximum per side are not included. 3.75 3.15 sot577-2 0 5 10 mm scale q j 0.4 w 0.6 v 0.03 x d e a l 1 q l c a 2 w m b p 1 d z e 2 e e 117 j 01-01-05 rdbs17p: plastic rectangular-dil-bent-sil power package; 17 leads (row spacing 2.54 mm) sot577-2 v m d x h e h non-concave view b : mounting base side b
2003 feb 12 19 philips semiconductors preliminary speci?cation 70 w high ef?ciency power ampli?er with diagnostic facility tda1562q; tda1562st; TDA1562SD unit a e 1 a 2 b p cd (1) e (1) z (1) de d h ll 1 references outline version european projection issue date iec jedec eiaj mm 13.5 4.6 4.4 0.75 0.60 0.48 0.38 24.0 23.6 20.0 19.6 10 2.54 12.2 11.8 1.27 e 2 2.54 3.75 3.15 e h 6 2.00 1.45 2.1 1.9 3.4 3.1 dimensions (mm are the original dimensions) note 1. plastic or metal protrusions of 0.25 mm maximum per side are not included. 3.75 3.15 sot668-2 0 5 10 mm scale q j 0.4 w 0.6 v 0.03 x d e a l 1 ql c a 2 w m b p 1 d z e 2 e e 1 17 j 01-01-05 rdbs17p: plastic rectangular-dil-bent-sil (reverse bent) power package; 17 leads (row spacing 2.54 mm) sot668-2 v m d x h e h non-concave view b : mounting base side b
2003 feb 12 20 philips semiconductors preliminary speci?cation 70 w high ef?ciency power ampli?er with diagnostic facility tda1562q; tda1562st; TDA1562SD soldering introduction to soldering through-hole mount packages this text gives a brief insight to wave, dip and manual soldering. a more in-depth account of soldering ics can be found in our data handbook ic26; integrated circuit packages (document order number 9398 652 90011). wave soldering is the preferred method for mounting of through-hole mount ic packages on a printed-circuit board. soldering by dipping or by solder wave the maximum permissible temperature of the solder is 260 c; solder at this temperature must not be in contact with the joints for more than 5 seconds. the total contact time of successive solder waves must not exceed 5 seconds. the device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified maximum storage temperature (t stg(max) ). if the printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit. manual soldering apply the soldering iron (24 v or less) to the lead(s) of the package, either below the seating plane or not more than 2 mm above it. if the temperature of the soldering iron bit is less than 300 c it may remain in contact for up to 10 seconds. if the bit temperature is between 300 and 400 c, contact may be up to 5 seconds. suitability of through-hole mount ic packages for dipping and wave soldering methods note 1. for sdip packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board. package soldering method dipping wave dbs, dip, hdip, sdip, sil suitable suitable (1)
2003 feb 12 21 philips semiconductors preliminary speci?cation 70 w high ef?ciency power ampli?er with diagnostic facility tda1562q; tda1562st; TDA1562SD data sheet status notes 1. please consult the most recently issued data sheet before initiating or completing a design. 2. the product status of the device(s) described in this data sheet may have changed since this data sheet was published. the latest information is available on the internet at url http://www.semiconductors.philips.com. 3. for data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. level data sheet status (1) product status (2)(3) definition i objective data development this data sheet contains data from the objective speci?cation for product development. philips semiconductors reserves the right to change the speci?cation in any manner without notice. ii preliminary data quali?cation this data sheet contains data from the preliminary speci?cation. supplementary data will be published at a later date. philips semiconductors reserves the right to change the speci?cation without notice, in order to improve the design and supply the best possible product. iii product data production this data sheet contains data from the product speci?cation. philips semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. relevant changes will be communicated via a customer product/process change noti?cation (cpcn). definitions short-form specification ? the data in a short-form specification is extracted from a full data sheet with the same type number and title. for detailed information see the relevant data sheet or data handbook. limiting values definition ? limiting values given are in accordance with the absolute maximum rating system (iec 60134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the specification is not implied. exposure to limiting values for extended periods may affect device reliability. application information ? applications that are described herein for any of these products are for illustrative purposes only. philips semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. disclaimers life support applications ? these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips semiconductors for any damages resulting from such application. right to make changes ? philips semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. when the product is in full production (status production), relevant changes will be communicated via a customer product/process change notification (cpcn). philips semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
2003 feb 12 22 philips semiconductors preliminary speci?cation 70 w high ef?ciency power ampli?er with diagnostic facility tda1562q; tda1562st; TDA1562SD notes
2003 feb 12 23 philips semiconductors preliminary speci?cation 70 w high ef?ciency power ampli?er with diagnostic facility tda1562q; tda1562st; TDA1562SD notes
? koninklijke philips electronics n.v. 2003 sca75 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owne r. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not con vey nor imply any license under patent- or other industrial or intellectual property rights. philips semiconductors C a worldwide company contact information for additional information please visit http://www.semiconductors.philips.com . fax: +31 40 27 24825 for sales of?ces addresses send e-mail to: sales.addresses@www.semiconductors.philips.com . printed in the netherlands 753503/02/pp 24 date of release: 2003 feb 12 document order number: 9397 750 09939

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